Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics
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A. Mocuta | B.H. Lee | T. Kanarsky | J. Welser | D. Boyd | D. Boyd | T. Kanarsky | H.-S.P. Wong | J. Welser | E. Gusev | K. Rim | J. Ott | K. Chan | A. Mocuta | B. Lee | J. Chu | C. D'Emic | M. Leong | H. Chen | E.P. Gusev | C. D'Emic | K. Rim | J. Ott | K. Chan | H.-S. Wong | V. Mazzeo | S. Cohen | J. Chu | M. Leong | H. Chen | V. Mazzeo | S.L. Cohen
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[2] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .