Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

[1]  Hiroshi Ito,et al.  Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition , 1997 .

[2]  N. Ikeda,et al.  Compositionally graded C-doped In/sub 1-x/Ga/sub x/As base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[3]  C. Amano,et al.  Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs , 1997 .

[4]  H. Roehle,et al.  Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere , 1997 .

[5]  W. Prost,et al.  The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT , 1997 .

[6]  Yong Kim,et al.  Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 , 1996 .

[7]  Hiroshi Ito,et al.  Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition , 1996 .

[8]  Hiroshi Ito,et al.  High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD , 1996 .

[9]  D. Pavlidis,et al.  Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4 , 1996 .

[10]  Hiroshi Ito,et al.  Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition , 1996 .

[11]  H. Hardtdegen,et al.  A new method for controlled carbon doping in LP-MOVPE of GaAs using TMAs and mixtures of TMGaTEGa , 1995 .

[12]  Hiroshi Ito,et al.  High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD , 1995 .

[13]  M. Weyers,et al.  Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide , 1995 .

[14]  M. Geva,et al.  Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy , 1995 .

[15]  H. Lüth,et al.  Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2 , 1994 .

[16]  G. Stillman,et al.  A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs , 1994 .

[17]  J. Cunningham,et al.  Characterization of the GaAs:C and AlGaAs:C doping superlattice grown by chemical beam epitaxy , 1991 .

[18]  G. Scilla,et al.  Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4-y, TMG and AsH3 , 1991 .

[19]  G. Scilla,et al.  Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy , 1988 .

[20]  H. Lüth,et al.  On the role of Hydrogen in the MOCVD of GaAs , 1986 .