Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen
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[1] Kenjiro Nakamura,et al. Roles of Atomic Hydrogen in Chemical Annealing , 1995 .
[2] Charles M. Fortmann,et al. Carrier transport in polycrystalline silicon films deposited by a layer‐by‐layer technique , 1994 .
[3] Noriyoshi Yamauchi,et al. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications , 1994 .
[4] D. He,et al. Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique , 1993 .
[5] K. Fujimoto,et al. In-Situ Chemically Cleaning Poly-Si Growth at Low Temperature , 1992 .
[6] M. Hashimoto,et al. Stacking Fault Induced by Gold Diffusion in Silicon , 1992 .
[7] Mohamed Guendouz,et al. Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films , 1991 .
[8] J. Hanna,et al. Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapour deposition , 1991 .
[9] Makoto Tanaka,et al. Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method , 1990 .
[10] Setsuo Kaneko,et al. High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film , 1989 .