Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
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G. Ghibaudo | M. Cassé | S. Haendler | F. Arnaud | M. Vinet | A. Juge | B. C. Paz | T. Meunier | F. Gaillard | E. Vincent | P. Galy | S. D. Franceschi