Dielectric breakdown I: A review of oxide breakdown

This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.

[1]  R. Fowler,et al.  Electron Emission in Intense Electric Fields , 1928 .

[2]  Jordi Suñé,et al.  Reversible dielectric breakdown of thin gate oxides in MOS devices , 1993 .

[3]  John S. Suehle,et al.  TDDB characterisation of thin SiO/sub 2/ films with bimodal failure populations , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[4]  Yoshiro Nakata,et al.  Evaluation technique of gate oxide reliability with electrical and optical measurements , 1989, Proceedings of the 1989 International Conference on Microelectronic Test Structures.

[5]  E. Harari.  Dielectric breakdown in electrically stressed thin films of thermal SiO2 , 1978 .

[6]  Jack C. Lee,et al.  Modeling and characterization of gate oxide reliability , 1988 .

[7]  Jordi Suñé,et al.  On the breakdown statistics of very thin SiO2 films , 1990 .

[8]  Max J. Schulz,et al.  Insulating Films on Semiconductors , 1981 .

[9]  Chiou-Feng Chen,et al.  The dielectric reliability of intrinsic thin SiO 2 films thermally grown on a heavily doped Si substrate—characterization and modeling , 1987 .

[10]  D. Arnold,et al.  Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .

[11]  E. A. Amerasekera,et al.  The physics of SiO2 layers , 1990 .

[12]  Arnold,et al.  Theory of high-field electron transport and impact ionization in silicon dioxide. , 1994, Physical review. B, Condensed matter.

[13]  P. Balk,et al.  Nature of defects in the Si‐SiO2 system generated by vacuum‐ultraviolet irradiation , 1994 .

[14]  Chenming Hu,et al.  Temperature acceleration of time-dependent dielectric breakdown , 1989 .

[15]  T. W. Hughes,et al.  Properties of high voltage stress generated traps in thin silicon oxides , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[16]  M. Kerber,et al.  Entirely gate-surrounded MOS capacitor to study the intrinsic oxide quality , 1992 .

[17]  Yasutake Ohishi,et al.  Fabrication of praseodymium‐doped arsenic sulfide chalcogenide fiber for 1.3‐μm fiber amplifiers , 1994 .

[18]  D. J. DiMaria.  Stress induced leakage currents in thin oxides , 1995 .

[19]  Chenming Hu,et al.  Effects of temperature and defects on breakdown lifetime of thin SiO/sub 2/ at very low voltages , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

[20]  Chenming Hu,et al.  Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown , 1988, Technical Digest., International Electron Devices Meeting.

[21]  W. W. Abadeer,et al.  Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections , 1995 .

[22]  D.J. DiMaria.  Hole trapping, substrate currents, and breakdown in thin silicon dioxide films [ in FETs ] , 1995, IEEE Electron Device Letters.

[23]  R. S. Scott,et al.  High field emission related thin oxide wearout and breakdown , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

[24]  Prasad Chaparala,et al.  Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/ , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.