InP-based high-speed Mach-Zehnder modulator
暂无分享,去创建一个
[1] H. Onaka,et al. Driver-less 40 Gb/s LiNbO/sub 3/ modulator with sub-1 V drive voltage , 2002, Optical Fiber Communication Conference and Exhibit.
[2] A. Sano,et al. 320 Gbit/s (8/spl times/40 Gbit/s) WDM transmission over 367 km with 120 km repeater spacing using carrier-suppressed return-to-zero format , 1999 .
[3] Nadir Dagli,et al. GaAs/AlGaAs electro-optic modulator with bandwidth >40 GHz , 1995 .
[4] H. C. Casey,et al. Variation of intervalence band absorption with hole concentration in p‐type InP , 1984 .
[5] Shirley Dex,et al. JR 旅客販売総合システム(マルス)における運用及び管理について , 1991 .
[6] R. Walker. High-speed III-V semiconductor intensity modulators , 1991 .
[7] John E. Bowers,et al. Model for trap filling and avalanche breakdown in semi-insulating Fe:InP , 1997 .
[8] H. Onaka,et al. Driver-less 40 Gb/s LiNbO/sub 3/ modulator with sub-1 V drive voltage , 2002, Optical Fiber Communication Conference and Exhibit.
[9] T. Watanabe,et al. 40 Gb/s InP-based Mach-Zehnder modulator with a driving voltage of 3 V/sub pp/ , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
[10] Yuichi Tohmori,et al. 40 Gbit/s n–i–n InP Mach–Zehnder modulator with a π voltage of 2.2 V , 2003 .
[11] Y. Shibata,et al. Controlled beam dry etching of InP by using Br2-N2 Gas , 1995 .
[12] K.-O. Velthaus,et al. 45 GHz bandwidth travelling wave electrode Mach-Zehnder modulator with integrated spot size converter , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..