Demonstration of a HV BCD technology with LV CMOS process

Conventional BCD and high voltage technologies are developed with extra masks and additional thermal drive-in process units included in existing LV platforms. The technology development is time-consuming and the turnaround time for the whole process takes longer. In this paper, a low cost solution with a set of layout design methodology is proposed to accomplish the embedded power BCD technology in the existing 5V CMOS process without any additional process steps.

[1]  F. Alagi,et al.  BCD8sP: An advanced 0.16 μm technology platform with state of the art power devices , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[2]  Shih Wei Sun,et al.  Integration of power LDMOS into a low-voltage 0.5 mu m BiCMOS technology , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[3]  Ralf Rudolf,et al.  Automotive 130 nm smart-power-technology including embedded flash functionality , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[4]  Adrianus Willem Ludikhuize,et al.  A review of RESURF technology , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[5]  Sung-Kun Park,et al.  HB1340 ℄ Advanced 0.13um BCDMOS technology of complimentary LDMOS including fully isolated transistors , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[6]  Jeng Gong,et al.  0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

[7]  Jeng Gong,et al.  Using LV process to design high voltage DDDMOSFET and LDMOSFET with 3-D profile structure , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[8]  Junghwan Lee,et al.  0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[9]  Min-Hwan Kim,et al.  Advanced 0.13um smart power technology from 7V to 70V , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.