Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body
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D.S.H. Chan | N. Balasubramanian | N. Singh | G. Lo | D. Kwong | W. Loh | R. Yang | N. Balasubramanian | Y. Xiong | D. Chan | L. Bera | L.K. Bera | D.-L. Kwong | N. Singh | R. Yang | G.Q. Lo | W.Y. Loh | Y. Jiang | Y. Jiang | Y.F. Lim | Y.Z. Xiong | Y.F. Lim
[1] Kenji Natori,et al. Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface , 1990 .
[2] Jean-Pierre Colinge,et al. Multiple-gate SOI MOSFETs: device design guidelines , 2002 .
[3] Fei Liu,et al. Giant random telegraph signals in the carbon nanotubes as a single defect probe , 2005 .
[4] Tso-Ping Ma,et al. The impact of device scaling on the current fluctuations in MOSFET's , 1994 .
[5] P.K. Ko,et al. Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.
[6] Gérard Ghibaudo,et al. Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..
[7] David J. Frank,et al. Nanoscale CMOS , 1999, Proc. IEEE.
[8] Eddy Simoen,et al. A low-frequency noise study of gate-all-around SOI transistors , 1993 .
[9] T.G.M. Kleinpenning,et al. On noise and random telegraph noise in very small electronic devices , 1990 .
[10] Tso-Ping Ma,et al. Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors , 1992 .
[11] J. Jomaah,et al. Coupling effects and channels separation in FinFETs , 2004 .
[12] C. Hu,et al. Nanoscale CMOS spacer FinFET for the terabit era , 2002 .
[13] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .
[14] J. Bokor,et al. Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs , 2003, IEEE Electron Device Letters.
[15] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .
[16] Mikael Östling,et al. 1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs , 2003 .
[17] T. Hiramoto,et al. Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels , 2000 .
[18] Ping-Keung Ko,et al. New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement , 1994 .
[19] Nuditha Vibhavie Amarasinghe,et al. Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs , 2000 .
[20] Gate-all-around MOSFETs: lateral ultra-narrow (/spl les/10 nm) fin as channel body , 2005 .
[21] J. Bokor,et al. Low-frequency noise characteristics in p-channel FinFETs , 2002, IEEE Electron Device Letters.