A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process

This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.

[1]  Shinsuke Konaka,et al.  A 1.9-GHz Si bipolar quadrature VCO with fully-integrated LC tank , 1998, 1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).

[2]  B. Razavi,et al.  A 2.6 GHz/5.2 GHz CMOS voltage-controlled oscillator , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[3]  Ting-Ping Liu,et al.  1.5 V 10-12.5 GHz integrated CMOS oscillators , 1999 .

[4]  D. Friedman,et al.  Sub-picosecond jitter SiGe BiCMOS transmit and receive PLLs for 12.5 Gbaud serial data communication , 2000, 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103).

[5]  A. Rofougaran,et al.  A 900 MHz CMOS LC-oscillator with quadrature outputs , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[6]  Ali Hajimiri,et al.  A 10 GHz CMOS distributed voltage controlled oscillator , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).