Comparison of Charge Pumping and $1/f$ Noise in Irradiated Ge pMOSFETs

Irradiated Ge pMOSFETs have been characterized via charge pumping <formula formulatype="inline"><tex Notation="TeX">$(I_{\rm CP})$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> noise. The noise increases much more with irradiation than does <formula formulatype="inline"> <tex Notation="TeX">$I_{\rm CP}$</tex></formula> for devices with eight Si monolayers at the interface, while devices with five Si monolayers and lower halo implantation dose exhibit comparable increases in noise and <formula formulatype="inline"><tex Notation="TeX">$I_{\rm CP}$</tex></formula> with irradiation. These results suggest that border traps in the <formula formulatype="inline"> <tex Notation="TeX">${\rm HfO}_{2}$</tex></formula> affect the noise more than interface traps, and that devices with eight Si monolayers have a higher border-trap density than devices with five Si monolayers. Noise measurements as a function of gate voltage show that the border trap density increases significantly toward the Ge valence band edge, while three-level charge pumping reveals an interface trap density that increases slightly toward midgap.

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