Annealing Effect of W Incorporated Diamond-Like Carbon Fabricated by Ga Focused Ion Beam Chemical Vapor Deposition

The effects of thermal annealing of W incorporated diamond-like carbon (W-DLC) films fabricated with focused ion beam chemical vapor deposition (FIB-CVD) were investigated using X-ray absorption fine structure near the carbon K-edge (C-K NEXAFS) and the combination of Rutherford backscattering (RBS) and elastic recoil detection analysis (ERDA). W-DLC films were annealed for 32 h at temperatures, Ta, between 673 and 1073 K. Comparing the Ta dependences of Ga and H contents obtained from RBS-ERDA and the sp2/(sp2 + sp3) ratios from C-K NEXAFS, it was found that even a trace amount of W incorporation into DLC films fabricated by Ga+ FIB-CVD may cause a significant sp3 →sp2 structural change.

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