论文信息 - Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation - 字舞流文

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

K. Fukuda | Y. Sugahara | S. Harada | H. Okumura | M. Okamoto | T. Tsutsumi | A. Otsuki | Y. Makifuchi | Tsuyoshi Araoka | Hiroshi Kimura | M. Miyazato | Y. Ōnishi