HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIMVaractor based on the surface-potential MOSFET model HiSIM by considering the majority carrier transit time. Good agreement with 2D device simulation result is verified up to 200GHz operation. The calculated quality factor is proved to deviate from linearity as a function of operation frequency due to the capacitance-formation delay caused by the carrier transit delay.

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