Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to >; 50 cm2/V · s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for organic light-emitting diode displays. Before any of these applications can be commercialized, however, a strong understanding of the stability and reliability of AOS TFTs is needed. The purpose of this paper is to provide a comprehensive review and summary of the recently emerging work on the stability and reliability of AOS TFTs with respect to illumination, bias stress, ambient effects, surface passivation, mechanical stress, and defects, as well as to point out areas for future work. An overview of the TFT operation and expected reliability concerns as well as a brief summary of the instabilities in the well-known Si3N4/a-Si:H system is also included.

[1]  Hideo Hosono,et al.  Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy , 2008 .

[2]  Hyuck-In Kwon,et al.  Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses , 2008 .

[3]  Sunghwan Lee,et al.  Amorphous IZO-based transparent thin film transistors , 2008 .

[4]  R. B. M. Cross,et al.  Investigating the stability of zinc oxide thin film transistors , 2006 .

[5]  Jang-Yeon Kwon,et al.  The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors , 2009 .

[6]  H. Ohta,et al.  Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.

[7]  David Hong,et al.  Passivation of zinc–tin–oxide thin-film transistors , 2005 .

[8]  J. Robertson,et al.  Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition , 2009 .

[9]  T. Riedl,et al.  Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting Diodes , 2006 .

[10]  Sung-Min Yoon,et al.  21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane , 2009 .

[11]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[12]  J. F. Conley,et al.  Directed integration of ZnO nanobridge sensors using photolithographically patterned carbonized photoresist , 2010, Nanotechnology.

[13]  B. Lee,et al.  Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers , 2008 .

[14]  Tsung‐Hsiang Shih,et al.  76.3: 32‐inch LCD Panel Using Amorphous Indium‐Gallium‐Zinc‐Oxide TFTs , 2010 .

[15]  Bruce E. Gnade,et al.  Mechanisms behind green photoluminescence in ZnO phosphor powders , 1996 .

[16]  J. Kanicki,et al.  Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors , 2009, Journal of Display Technology.

[17]  S. Im,et al.  Surface-induced time-dependent instability of ZnO based thin-film transistors , 2009 .

[18]  Hideo Hosono,et al.  Trap densities in amorphous-InGaZnO4 thin-film transistors , 2008 .

[19]  Tim Koch,et al.  21.4: Zinc Indium Oxide Thin-Film Transistors for Active-Matrix Display Backplane , 2009 .

[20]  David Hong,et al.  Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide , 2009 .

[21]  Wolfgang Kowalsky,et al.  Ultra‐high long‐term stability of oxide‐TTFTs under current stress , 2007 .

[22]  J. Robertson.  Disorder, band offsets and dopability of transparent conducting oxides , 2008 .

[23]  Yeon-Gon Mo,et al.  Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs , 2011 .

[24]  Wolfgang Kowalsky,et al.  Zinc tin oxide based driver for highly transparent active matrix OLED displays , 2009 .

[25]  Yeon-Gon Mo,et al.  69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs , 2010 .

[26]  Hideo Hosono,et al.  Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states , 2008 .

[27]  Martin Moskovits,et al.  Chemical Sensing and Catalysis by One-Dimensional Metal-Oxide Nanostructures , 2004 .

[28]  Po-Tsun Liu,et al.  Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress , 2009 .

[29]  Z. Fan,et al.  ZnO nanowire field-effect transistor and oxygen sensing property , 2004 .

[30]  Wolfgang Kowalsky,et al.  Stability of transparent zinc tin oxide transistors under bias stress , 2007 .

[31]  Sang-Hee Ko Park,et al.  Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors , 2009 .

[32]  Doo-Hee Cho,et al.  Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature , 2008 .

[33]  D. Staebler,et al.  Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .

[34]  David Hong,et al.  Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors , 2008 .

[35]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[36]  E. Fortunato,et al.  Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics , 2009 .

[37]  R. McLean,et al.  Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering , 2003 .

[38]  J. Suehle,et al.  Low electric field breakdown of thin SiO/sub 2/ films under static and dynamic stress , 1997 .

[39]  Hyuck-In Kwon,et al.  Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors , 2008 .

[40]  Massimo V. Fischetti,et al.  Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .

[41]  T. Jackson,et al.  Fast Flexible Plastic Substrate ZnO Circuits , 2010, IEEE Electron Device Letters.

[42]  J. Conley,et al.  Directed integration of ZnO nanobridge devices on a Si substrate , 2005 .

[43]  Woong Kim,et al.  ZnO nanowire field‐effect transistor as a UV photodetector; optimization for maximum sensitivity , 2009 .

[44]  Jin-seong Park,et al.  Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties , 2010 .

[45]  J. Robertson.  Physics of amorphous conducting oxides , 2008 .

[46]  Hyun-Joong Chung,et al.  Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water , 2008 .

[47]  Changjung Kim,et al.  Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules , 2007 .

[48]  Hideo Hosono,et al.  Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors , 2009 .

[49]  Hyun-Soo Kim,et al.  High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability , 2009 .

[50]  I. D. French,et al.  Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors , 1987 .

[51]  Shelby Forrester Nelson,et al.  Stable ZnO thin film transistors by fast open air atomic layer deposition , 2008 .

[52]  J. Myoung,et al.  Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer , 2009 .

[53]  W. Kowalsky,et al.  Transparent Electronics for See-Through AMOLED Displays , 2009, Journal of Display Technology.

[54]  Jong-Ho Lee,et al.  Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics , 2009 .

[55]  Changdeuck Bae,et al.  Bias-stress-stable solution-processed oxide thin film transistors. , 2010, ACS applied materials & interfaces.

[56]  Yeon-Gon Mo,et al.  Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors , 2008 .

[57]  Ichiro Yamada,et al.  Competitive surface effects of oxygen and water on UV photoresponse of ZnO nanowires , 2009 .

[58]  Yu-Lin Wang,et al.  Stable room temperature deposited amorphous InGaZnO4 thin film transistors , 2008 .

[59]  J. F. Conley,et al.  What can electron paramagnetic resonance tell us about the Si/SiO2 system? , 1998 .

[60]  J. Wager,et al.  Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors , 2009, IEEE Transactions on Electron Devices.

[61]  J. F. Conley,et al.  Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics , 2010 .

[62]  A. Flewitt,et al.  Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process , 2009 .

[63]  John F. Muth,et al.  Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .

[64]  T. Jackson,et al.  Fast PEALD ZnO Thin-Film Transistor Circuits , 2010, IEEE Transactions on Electron Devices.

[65]  D. Krick,et al.  Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study , 1988 .

[66]  Pedro Barquinha,et al.  Gate-bias stress in amorphous oxide semiconductors thin-film transistors , 2009 .

[67]  J. Wager,et al.  Transparent Electronics , 2003, Science.

[68]  T. Kamiya,et al.  Amorphous In–Ga–Zn-O thin-film transistor with coplanar homojunction structure , 2009 .

[69]  T. Riedl,et al.  Encapsulation of Zinc Tin Oxide Based Thin Film Transistors , 2009 .

[70]  Doo-Hee Cho,et al.  Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors , 2009 .

[71]  J. F. Conley.  Application of Electron Spin Resonance as a Tool for Building In Reliability (BIR) , 1996 .

[72]  Patrick M. Lenahan,et al.  Magnetic Resonance Studies of Trapping Centers in High- Dielectric Films on Silicon , 2005 .

[73]  Narihiro Morosawa,et al.  69.2: Highly Reliable Oxide‐Semiconductor TFT for AM‐OLED Display , 2010 .

[74]  Benjamin J. Norris,et al.  ZnO-based transparent thin-film transistors , 2003 .

[75]  Y. Vygranenko,et al.  Stable indium oxide thin-film transistors with fast threshold voltage recovery , 2007 .

[76]  M. J. Powell.  The physics of amorphous-silicon thin-film transistors , 1989 .

[77]  Martin Moskovits,et al.  CHEMICAL SENSING AND CATALYSIS BY ONE-DIMENSIONAL METAL-OXIDE NANOSTRUCTURES , 2004 .

[78]  P. Lenahan,et al.  Magnetic resonance studies of trapping centers in high-/spl kappa/ dielectric films on silicon , 2005, IEEE Transactions on Device and Materials Reliability.

[79]  P. Taylor.  Chapter 3 Magnetic Resonance Measurements in a-Si:H , 1984 .

[80]  Pedro Barquinha,et al.  Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide , 2006 .

[81]  T. Fuyuki,et al.  Thermal Analysis of Degradation in Ga 2 O 3 – In 2 O 3 – ZnO Thin-Film Transistors , 2008 .

[82]  Jin-seong Park,et al.  The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors , 2009 .

[83]  B. Bae,et al.  High performance solution-processed amorphous zinc tin oxide thin film transistor , 2009 .

[84]  Wolfgang Kowalsky,et al.  The influence of visible light on transparent zinc tin oxide thin film transistors , 2007 .

[85]  T. Ning,et al.  Optically induced injection of hot electrons into SiO2 , 1974 .

[86]  M. M. De Souza,et al.  The Effect of Gate-Bias Stress and Temperature on the Performance of ZnO Thin-Film Transistors , 2008, IEEE Transactions on Device and Materials Reliability.

[87]  S. Nelson,et al.  Oxide Electronics by Spatial Atomic Layer Deposition , 2009, Journal of Display Technology.

[88]  John M. White,et al.  High mobility amorphous zinc oxynitride semiconductor material for thin film transistors , 2009 .

[89]  Jerzy Kanicki,et al.  Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .

[90]  T. Fuyuki,et al.  Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors , 2008 .