Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

An efficient one-dimensional ensemble Monte Carlo simulator that improves the study of carrier transport by including a space-variable charge algorithm has been developed. The algorithm is automatically implemented in regions with remarkable concentration gradients. In this way is possible to study devices in which the carrier concentration varies by several orders of magnitude along the device and/or when we are interested in the population of states rarely occupied by the carriers (tails of distribution functions, hot electrons, etc) without excessive CPU requirements. In the present work this technique is used to study a Schottky barrier diode over a wide range of forward bias (80 - 800 mV). In particular, the exponential behaviour of the current - voltage characteristic, the agreement of this with the experimental results, the distribution function and the recombination velocity of carriers close to the metal - semiconductor interface confirm the validity of the implemented algorithm.

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