Ion Implantation Calculations in Two Dimensions Using the Boltzmann Transport Equation

A two-dimensional method based on numerical solution of the Boltzmann transport equation has been developed for calculating ion implantation profiles. The method is capable of treating arbitrarily contoured surfaces containing multiple layers of different materials. Calculations yield the concentration profile of the implanted ion, an estimate of the damage distribution, and concentration profiles from recoiled target atoms. Substantial differences are seen from one-dimensional and point-response two-dimensional methods when the interfaces are far from planar.

[1]  M. Giles,et al.  Two‐Dimensional Ion Implantation Profiles from One‐Dimensional Projections , 1985 .

[2]  A. Yoshii,et al.  A two-dimensional Boltzmann transport equation approach to ion implantation in silicon , 1983, IEEE Electron Device Letters.

[3]  W. Fichtner,et al.  Vectorized Monte Carlo calculation for the transport of ions in amorphous targets , 1983, IEEE Transactions on Electron Devices.

[4]  M. Giles,et al.  A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies , 1983 .

[5]  James F. Gibbons,et al.  Stoichiometric disturbances in ion implanted compound semiconductors , 1981 .

[6]  J. Gibbons,et al.  Recoil range distributions in multilayered targets , 1981 .

[7]  James F. Gibbons,et al.  An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets , 1980 .

[8]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[9]  H. Runge.  Distribution of implanted ions under arbitrarily shaped mask edges , 1977 .

[10]  S. Furukawa,et al.  Lateral spread of damage formed by ion implantation , 1976 .

[11]  N. Koeman,et al.  Concentration profiles of boron implantations in amorphous and polycrystalline silicon , 1975 .

[12]  Mark T. Robinson,et al.  Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation , 1974 .

[13]  S. Furukawa,et al.  Backscattering study on lateral spread of implanted ions , 1973 .

[14]  Hiroshi Ishiwara,et al.  Theoretical Considerations on Lateral Spread of Implanted Ions , 1972 .

[15]  D. K. Brice,et al.  ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS , 1970 .