A New Procedure for Calculating Immittance Characteristics Using Detailed Computer Simulations

Immittance based methods are often used in the stability analysis of power electronics based systems. Because it is difficult and/or time consuming to develop average value models of some components, it is often desirable to extract immittance data from detailed simulations (simulations in which the switching of the power semiconductors is represented). Traditionally, this is accomplished by introducing a perturbation, extracting the fundamental component of the voltage and current waveforms at the perturbation frequency, from which the impedance at that frequency may be extracted using transform techniques. In this work, an alternate approach is suggested, which offers both reduced computational effort as well as increased accuracy.

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