论文信息 - AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

AlGaAs double‐heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge‐coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.

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