论文信息 - Dependence of static dielectric constant of silicon on resistivity at room temperature

Dependence of static dielectric constant of silicon on resistivity at room temperature

The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behavior.

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