Semiconductor device having buried gate and manufacturing method of the same

Embodiment of the present invention includes a PN is that the buried gate is the gate contact for supplying the operating power supply connected to the gate contact and opposite to the dummy active regions after forming the dummy active regions in a region formed in a semiconductor device having a buried gate even if the miss alignment of the gate contact occurs to form a diode junction to a semiconductor device, which current can be prevented from flowing out to the substrate current leakage problems.