Linearity characterization of GaN HEMT technologies through innovative on-wafer multi-tone load-pull measurements

An innovative on-wafer multi-tone load-pull (MTLP) bench is presented in this paper. It has been used to assess the linearity performances of different GaN HEMT transistors from two international foundries according to both single- and multi-carrier figures of merit. Time-domain characteristics studies suggest complementary distortion analysis. The transistors are operated at C-band in deep Class-AB. That bias appropriately copes with efficiency and linearity dilemma. The bench currently supports successful telecommunication and radar qualifications.

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