论文信息 - Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

Ensemble Monte Carlo simulation of two-dimensional electron transport is performed for a biased undoped AlGaN/GaN channel. The effect of hot phonons on electron drift velocity and energy dissipation is investigated, the model is found correct within a factor of ~2 when LO-phonon conversion lifetime is assumed to be 0.35 ps.

M Ramonas | A Matulionis

[1] Hadis Morkoç,et al. Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN , 1998 .

[2] A. Gossard,et al. Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures , 1983 .

[3] L. Eastman,et al. Progress in High-Power, High Frequency AlGaN/GaN HEMTs , 2002 .

[4] B. Ridley,et al. Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN , 2003 .

[5] Peter J. Price,et al. Hot phonon effects in silicon field‐effect transistors , 1989 .

[6] Y. Gomeniuk,et al. Quantitative spectroscopy of substitutional nitrogen in GaAs1−xNx epitaxial layers by local vibrational mode absorption , 2003 .

[7] L. Rota,et al. Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel , 2003 .

[8] Lester F. Eastman,et al. Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis , 2003 .

[9] B. Ridley. Hot phonons in high-field transport , 1989 .

[10] Lester F. Eastman,et al. Electron drift velocity in AlGaN/GaN channel at high electric fields , 2003 .

[11] P. Lugli,et al. Monte Carlo algorithm for hot phonons in polar semiconductors , 1987 .

[12] P. Kocevar,et al. Hot phonon dynamics , 1985 .