论文信息 - Studies Of The Si/SiO2 Interface Using Synchrotron Radiation

Studies Of The Si/SiO2 Interface Using Synchrotron Radiation

Synchrotron radiation photoemission spectroscopy (SRPS) in the 1-4 KeV photon energy range is a useful tool for interface characterization. We present results of a series of studies of the near-interface region of Si/Si02 which confirm that a bond strain gradient exists in the oxide as a result of lattice mismatch. These experiments include measurement of photoemission lineshape changes as a function of photon energy, corresponding changes in the electron escape depth near the interface, and surface extended x-ray absorption fine structure (SEXAFS) measurements directly indicating the shortening of the Si-Si second nearest neighbor distance in the near-interface region of the oxide.

F. J. Grunthaner | Michael H. Hecht | M. Hecht | F. Grunthaner

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