A new power MOSFET model and an easy to use characterization tool using device datasheet

In this paper, we present a new power MOSFET model and an easy to use characterization tool which extracts model parameters from data available in device datasheets. The model has a good balance between accuracy and ease of parameter extraction, and covers both static and dynamic characterization. The extraction flow is streamlined with a user friendly interface. The simulation results from the extracted model are validated with datasheet results, and a good accuracy of +/-5% has been achieved.

[1]  T. Barucki,et al.  Fast dynamic model family of semiconductor switches , 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

[2]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[3]  H. Shichman,et al.  Modeling and simulation of insulated-gate field-effect transistor switching circuits , 1968 .

[4]  Z. Cendes,et al.  A novel electrothermal IGBT modeling approach for circuit simulation design , 2008, 2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition.

[5]  M. Mudholkar,et al.  A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[6]  Sei-Hyung Ryu,et al.  Recent progress in SiC DMOSFETs and JBS diodes at Cree , 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.