论文信息 - Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3 - 字舞流文

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

N. Esser | J. Bläsing | A. Dadgar | A. Krost | M. Feneberg | Sarah Osterburg | Karsten Lange | C. Lidig | B. Garke | R. Goldhahn | E. Richter | C. Netzel | M. Neumann | S. Fritze | H. Witte