High-quality active inductors

A high-quality active integrated inductor is presented. The circuit has an inductance of 20 nH and a quality factor of 47 at 1.8 GHz. It is designed to be realised using standard silicon bipolar technology and consumes 2.6 mW at a supply voltage of 3 V.

[1]  Yannis Papananos,et al.  Novel Si integrated inductor and transformer structures for RF IC design , 1999, ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349).

[2]  M. Pardoen,et al.  Reducing the substrate losses of RF integrated inductors , 1998 .

[3]  William B. Kuhn,et al.  Q-enhanced LC bandpass filters for integrated wireless applications , 1998 .

[4]  A. J. Payne,et al.  VHF CMOS integrated active inductor , 1996 .

[5]  J.N. Burghartz,et al.  Multilevel-spiral inductors using VLSI interconnect technology , 1996, IEEE Electron Device Letters.