论文信息 - FREEZE‐OUT CHARACTERISTICS OF THE MOS VARACTOR

FREEZE‐OUT CHARACTERISTICS OF THE MOS VARACTOR

Experimental MOS C(V) data are obtained in the temperature range over which majority carriers are substantially frozen out (40° − 70°K). These are compared with calculated curves and other calculated curves are presented to show the effect of impurity concentration and compensation. The C(V) curves are characterized by a secondary minimum in capacitance near the flat band bias.

P. V. Gray | Dale M. Brown

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