Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering

Hexagonal‐structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2 atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(111) using the same deposition conditions showed that the average grain size was ≂10 nm. The room‐temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2×10−4 Ω cm and 1.2×10−4 K−1, respectively. The films exhibited relatively low compressive stresses, 1–3×109 dyn cm−2, and film/substrate couples photolithographically patterned into thin‐film heater elements withstood 2×107 thermal cycles between <200 and ≂850 °C.