Tunneling of electrons from Si into thermally grown SiO2

Abstract Accurate measurements of electron tunneling at the SiSiO 2 interface were performed using the decay of surface potential following charging of the exposed oxide surface by positive corona ions. The surface potential was measured by an automated Kelvin-probe arrangement. Comparison of results for various substrate dopings, crystallographic orientations and oxide film thicknesses is presented. A model for tunneling based on electrons being confined within the lowest subband at the SiSiO 2 interface is also discussed and compared to the Fowler-Nordheim expression.

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