Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction

This work shows that channel hot carrier (CHC) in nMOSFET consists in two different regimes depending on the gate voltage (Vg). At low Vg, a simple way to extrapolate lifetime at nominal bias conditions from data get under accelerated stress conditions will be detailed. At high Vg, the second degradation mode becomes worse depending on Vd. This work focuses on the worst case degradation determination and the model effects on the device lifetime prediction in relation to the CHC degradation mechanisms. A combined and complementary use of charge pumping (CP) and direct current current voltage (DCIV) allows us to obtain the spatial interface traps (Nit) localization giving more information on Nit impact on linear transistor parameters degradation

[1]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[2]  M. Denais,et al.  Combined effect of NBTI and channel hot carrier effects in pMOSFETs , 2005, 2005 IEEE International Integrated Reliability Workshop.

[4]  K. Tatsuuma,et al.  A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs , 2004, IEEE Transactions on Device and Materials Reliability.

[5]  Miryeong Song,et al.  New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

[6]  G. Groeseneken,et al.  A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.

[7]  C. Sah,et al.  A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor , 1961, Proceedings of the IRE.

[8]  Chenming Hu,et al.  Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement , 1985, IEEE Journal of Solid-State Circuits.

[9]  G. Larosa,et al.  Impact of E-E scattering to the hot carrier degradation of deep submicron NMOSFETs , 1998, IEEE Electron Device Letters.

[10]  C. Hu,et al.  A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation , 1991 .