Diamond photoconductors: operational lifetime and radiation hardness under deep-UV excimer laser irradiation

Abstract The first study of long term pulse exposure and fluence level on the performance of CVD diamond photodetectors subjected to 193 nm excimer laser radiation has been performed. Whilst diamond is considered ‘radiation hard’ it is shown that damage to detector performance can be provoked at laser fluence levels considerably below that required for graphitisation or ablation. However, the application of defect passivation treatments prior to device use acts to considerably reduce the damaging effect of the radiation, such that devices suitable for stable laser monioring applications can be realised.

[1]  M. Stutzmann,et al.  Carrier trapping and release in CVD-diamond films , 1998 .

[2]  R. Jackman,et al.  Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study , 1996 .

[3]  K. Ueda,et al.  THE GRAIN SIZE DEPENDENCE OF THE MOBILITY AND LIFETIME IN CHEMICAL VAPOR DEPOSITED DIAMOND PHOTOCONDUCTIVE SWITCHES , 1998 .

[4]  S. Prawer,et al.  Photoinduced conductivity changes in polycrystalline diamond films , 1996 .

[5]  Scott McWilliams,et al.  Device properties of homoepitaxially grown diamond , 1993 .

[6]  F. Galluzzi,et al.  Transient photoresponse of CVD diamond-based detectors in the time domain 10−9s–103s , 1999 .

[7]  R. Jackman,et al.  Thin film diamond UV photodetectors: Photodiodes compared with photoconductive devices for highly selective wavelength response , 1996 .

[8]  Albert Rose,et al.  Concepts in photoconductivity and allied problems , 1963 .

[9]  Hui Jin Looi,et al.  Optimising the electronic and optoelectronic properties of thin-film diamond , 1999 .

[10]  Richard B. Jackman,et al.  High carrier mobility in polycrystalline thin film diamond , 1998 .

[11]  P. Bergonzo,et al.  Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization , 1998 .

[12]  Malcolm C. Gower,et al.  Experimental testing of integral truncation algorithms for the calculation of beam widths by proposed ISO standard methods , 1995, Photonics West.

[13]  Richard B. Jackman,et al.  Polycrystalline diamond photoconductive device with high UV‐visible discrimination , 1995 .

[14]  Erol C. Harvey,et al.  Excimer laser patterning of thick and thin films for high-density packaging , 1997, Other Conferences.

[15]  V. Ralchenko,et al.  Ablation of CVD diamond with nanosecond laser pulses of UV-IR range , 1998 .