论文信息 - Bulk inversion in FinFETs and the implied insignificance of the effective gate width

Bulk inversion in FinFETs and the implied insignificance of the effective gate width

Three- and two-dimensional numerical simulations of double-gate (DG) and triple-gate (TG) FinFETs having undoped thin bodies have revealed the significance of bulk-inversion current in I/sub on/, as well as I/sub off/, and the consequent insignificance of the commonly defined effective gate width in comparisons of DG and TG currents.

J.G. Fossum | V.P. Trivedi | S.-H. Kim

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