Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

[1]  T. Endoh,et al.  Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot , 2011 .

[2]  T. Endoh,et al.  Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots , 2010 .

[3]  K. Shiraishi,et al.  Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level , 2008 .

[4]  K. Makihara,et al.  Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics , 2007 .

[5]  Dim-Lee Kwong,et al.  Metal nanocrystal memory with high-/spl kappa/ tunneling barrier for improved data retention , 2005 .

[6]  K. Arai,et al.  Toward long-term retention-time single-electron-memory devices based on nitrided nanocrystalline silicon dots , 2004, IEEE Transactions on Nanotechnology.

[7]  M. Ikeda,et al.  Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories , 2003 .

[8]  G. Pei,et al.  Metal nanocrystal memories. I. Device design and fabrication , 2002 .

[9]  B. Hinds,et al.  Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory , 2001 .

[10]  N. Sugiyama,et al.  Non-volatile Si quantum memory with self-aligned doubly-stacked dots , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[11]  M. Ikeda,et al.  Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition , 2000 .

[12]  Ken Uchida,et al.  Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory , 2000 .

[13]  Sandip Tiwari,et al.  Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors , 1998 .

[14]  Y. Lee,et al.  Room temperature operation of a quantum-dot flash memory , 1997, IEEE Electron Device Letters.

[15]  Stephen Y. Chou,et al.  A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel , 1997 .

[16]  Sandip Tiwari,et al.  Single charge and confinement effects in nano-crystal memories , 1996 .

[17]  Yasuo Takahashi,et al.  Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates , 1996 .

[18]  Sandip Tiwari,et al.  A silicon nanocrystals based memory , 1996 .

[19]  Edwin C. Kan,et al.  Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications , 2005 .