论文信息 - Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization - 字舞流文

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

D. Chaussende | M. Mermoux | G. Feuillet | M. Pons | P. Ferret | T. Billon | R. Madar | E. Blanquet | C. Faure | E. Pernot | F. Baillet | L. D. Coccio