Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-Level Random Telegraph Signal Noise

As device size shrinks smaller, random telegraph signal (RTS) noise, which is caused by the trapping and detrapping of a single carrier will become a serious issue. In this paper, we characterized four level RTS and extracted the characteristics of two independent traps. Once the position of the trap is found in the oxide (xT) and along the channel (yT) with respect to source, we extracted difference between the oxide conduction band energy (ECox) and trap energy (ET). Finally we introduce eight level RTS observed in some sample which indicates existence of three active traps.