Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio
暂无分享,去创建一个
M. Kondô | H. Sudo | T. Tanahashi | T. Fukushima | C. Anayama | M. Sugano | Y. Kito | A. Furaya
[1] M. Kondô,et al. One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping , 1993 .
[2] M. Kondô,et al. High-power operation of selfaligned stepped substrate (S/sup 3/) AlGaInP visible laser diode , 1993 .
[3] K. Yodoshi,et al. Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates , 1992 .
[4] Y. Uematsu,et al. Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer , 1990 .
[5] Shigeo Kawata,et al. High-power operation of a transverse-mode stabilised AlGaInp visible light (λ L = 683 nm) semiconductor laser , 1987 .