Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes

The versatility of split capacitance measurements on the standard SOI gated p-i-n diodes is presented and discussed. The presence of both n+- and p+-type contacts in the same structure eliminates the floating-body and transient effects, and stands as a major advantage over the conventional MOSFETs characterization. We demonstrate the feasibility of simultaneous electrical (threshold voltage for n- and p-channels) and structural (layer thickness) parameter extraction by systematic measurements and TCAD numerical simulations.

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