The growth and characterization of high quality MOVPE GaAs and GaAlAs

[1]  A. P. Roth,et al.  Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy , 1983 .

[2]  J. Merz,et al.  Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition , 1983 .

[3]  Miyoko O. Watanabe,et al.  AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs , 1983 .

[4]  S. Ghandhi,et al.  Morphology of organometallic CVD grown GaAs epitaxial layers , 1983 .

[5]  P. Frijlink,et al.  Modulation Doped GaAs–Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE , 1983 .

[6]  D. K. Wagner,et al.  Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source , 1983 .

[7]  P. Bhattacharya,et al.  Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs , 1982 .

[8]  Y. Mori,et al.  Residual Donor Impurities in MO-CVD Gallium Arsenide , 1982 .

[9]  J. Hallais,et al.  Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy , 1982 .

[10]  K. Wittmaack,et al.  Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE , 1982 .

[11]  J. J. Yang,et al.  Electrical properties of Zn in metalorganic chemical vapor deposition Ga1−xAlxAs , 1982 .

[12]  C. B. Cooper,et al.  Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications , 1981 .

[13]  H. M. Manasevit,et al.  High purity GaAs prepared from trimethylgallium and arsine , 1981 .

[14]  A. Tanaka,et al.  Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's , 1981 .

[15]  L. Samuelson,et al.  Electrical and optical properties of deep levels in MOVPE grown GaAs , 1981 .

[16]  J. Hallais,et al.  Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE , 1981 .

[17]  M. Yoshimi,et al.  Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition , 1981 .

[18]  Miyoko O. Watanabe,et al.  Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs , 1981 .

[19]  J. Christoffersen,et al.  Kinetics of dissolution of calcium hydroxyapatite: IV. The effect of some biologically important inhibitors , 1981 .

[20]  Y. Mori,et al.  AlGaAs grown by metalorganic chemical vapor deposition for visible laser , 1981 .

[21]  Gerald B. Stringfellow,et al.  Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices , 1981 .

[22]  C. B. Cooper,et al.  The trend of deep states in organometallic vapor‐phase epitaxial GaAs with varying As/Ga ratios , 1980 .

[23]  D. Huyghe,et al.  A New Method for Growing GaAs Epilayers by Low Pressure Organometallics , 1979 .

[24]  G. B. Stringfellow,et al.  Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE , 1979 .

[25]  D. Lang,et al.  Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As , 1979 .

[26]  P. D. Dapkus,et al.  Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition , 1978 .

[27]  G. B. Stringfellow,et al.  OMVPE growth of AlxGa1−xAs , 1978 .

[28]  P. D. Dapkus,et al.  Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .

[29]  R. Nelson Long‐lifetime photoconductivity effect in n‐type GaAlAs , 1977 .

[30]  Y. Seki,et al.  Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System , 1975 .

[31]  E. Butter,et al.  Epitaktische Abscheidung von GaAs im System Ga(CH3)3AsH3H2 (I) Autoepitaktische Abscheidung , 1974 .

[32]  S. Ito,et al.  Properties of Epitaxial Gallium Arsenide from Trimethylgallium and Arsine , 1973 .

[33]  C. M. Wolfe,et al.  Acceptor Luminescence in High-Purityn-Type GaAs , 1970 .

[34]  H. M. Manasevit,et al.  The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds , 1969 .