The growth and characterization of high quality MOVPE GaAs and GaAlAs
暂无分享,去创建一个
[1] A. P. Roth,et al. Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy , 1983 .
[2] J. Merz,et al. Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition , 1983 .
[3] Miyoko O. Watanabe,et al. AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs , 1983 .
[4] S. Ghandhi,et al. Morphology of organometallic CVD grown GaAs epitaxial layers , 1983 .
[5] P. Frijlink,et al. Modulation Doped GaAs–Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE , 1983 .
[6] D. K. Wagner,et al. Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source , 1983 .
[7] P. Bhattacharya,et al. Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs , 1982 .
[8] Y. Mori,et al. Residual Donor Impurities in MO-CVD Gallium Arsenide , 1982 .
[9] J. Hallais,et al. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy , 1982 .
[10] K. Wittmaack,et al. Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE , 1982 .
[11] J. J. Yang,et al. Electrical properties of Zn in metalorganic chemical vapor deposition Ga1−xAlxAs , 1982 .
[12] C. B. Cooper,et al. Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications , 1981 .
[13] H. M. Manasevit,et al. High purity GaAs prepared from trimethylgallium and arsine , 1981 .
[14] A. Tanaka,et al. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's , 1981 .
[15] L. Samuelson,et al. Electrical and optical properties of deep levels in MOVPE grown GaAs , 1981 .
[16] J. Hallais,et al. Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE , 1981 .
[17] M. Yoshimi,et al. Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition , 1981 .
[18] Miyoko O. Watanabe,et al. Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs , 1981 .
[19] J. Christoffersen,et al. Kinetics of dissolution of calcium hydroxyapatite: IV. The effect of some biologically important inhibitors , 1981 .
[20] Y. Mori,et al. AlGaAs grown by metalorganic chemical vapor deposition for visible laser , 1981 .
[21] Gerald B. Stringfellow,et al. Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices , 1981 .
[22] C. B. Cooper,et al. The trend of deep states in organometallic vapor‐phase epitaxial GaAs with varying As/Ga ratios , 1980 .
[23] D. Huyghe,et al. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics , 1979 .
[24] G. B. Stringfellow,et al. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE , 1979 .
[25] D. Lang,et al. Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As , 1979 .
[26] P. D. Dapkus,et al. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition , 1978 .
[27] G. B. Stringfellow,et al. OMVPE growth of AlxGa1−xAs , 1978 .
[28] P. D. Dapkus,et al. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .
[29] R. Nelson. Long‐lifetime photoconductivity effect in n‐type GaAlAs , 1977 .
[30] Y. Seki,et al. Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System , 1975 .
[31] E. Butter,et al. Epitaktische Abscheidung von GaAs im System Ga(CH3)3AsH3H2 (I) Autoepitaktische Abscheidung , 1974 .
[32] S. Ito,et al. Properties of Epitaxial Gallium Arsenide from Trimethylgallium and Arsine , 1973 .
[33] C. M. Wolfe,et al. Acceptor Luminescence in High-Purityn-Type GaAs , 1970 .
[34] H. M. Manasevit,et al. The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds , 1969 .