论文信息 - The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base

The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base

A barrier height of 1.13±0.03 eV was measured for Al and Au rectifying contacts to p‐type chemical‐vapor‐deposited diamond thin films using the internal photoemission technique. The results are compared with experimental data reported for Schottky barriers on single‐crystal diamond.

[1] G. Gildenblat,et al. Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films , 1988 .

[2] John J. Quinn,et al. Range of Excited Electrons in Metals , 1962 .

[3] R. Fowler,et al. The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .

[4] Carver A. Mead,et al. Fermi Level Position at Metal-Semiconductor Interfaces , 1964 .

[5] Carver A. Mead,et al. Metal-semiconductor surface barriers , 1966 .

[6] Rustum Roy,et al. Vapor Deposition Synthesis Of Diamond Films , 1986, Optics & Photonics.

[7] T. C. Mcgill,et al. Schottky barrier heights on p-type diamond and silicon carbide (6h) , 1976 .

[8] B. Derjaguin,et al. Vapor growth of diamond on diamond and other surfaces , 1981 .

[9] G. Glover,et al. The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamonds , 1973 .

[10] Rustum Roy,et al. Crystallization of diamond crystals and films by microwave assisted CVD (Part II) , 1988 .

[11] F. Himpsel,et al. Schottky barriers on diamond (1 1 1) , 1980 .

[12] N. Fujimori,et al. Characterization of conducting diamond films , 1986 .

[13] Surface States on the (111) Surface of Diamond , 1964 .