论文信息 - Be‐implanted GaAs/GaAlAs double heterostructure stripe geometry lasers grown by metalorganic chemical vapor deposition

Be‐implanted GaAs/GaAlAs double heterostructure stripe geometry lasers grown by metalorganic chemical vapor deposition

Be‐implanted double heterostructure stripe geometry GaAs lasers grown by metalorganic chemical vapor deposition are described. Near‐field and far‐field patterns of the lasers are given. A regrowth process was used in order to introduce the highly conductive GaAs cap layer over the implanted structure.

H. Shtrikman | D. Fekete

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