Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility
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Eduard A. Cartier | Supratik Guha | Nestor A. Bojarczuk | M. Copel | L. Ragnarsson | E. Cartier | M. Copel | N. Bojarczuk | S. Guha | Lars-Ake Ragnarsson | J. Karasinski | J. Karasinski
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