论文信息 - 44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

Hybrid low noise amplifiers using ion-implanted In,Gal -. As MESFETs with 0.25-micron T-gates have been developed at 44 GHz. The hybrid two-stage amplifier using these ion-implanted In,Gal - .As MESFETs achieved a noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz. When two of these amplifiers were cascaded, the four-stage amplifier demonstrated a gain of 30.5 dB at 44 GHz and 37 dB at 40 GHz. These results, achieved using low cost ion-implantation techniques, rival the best HEMT results.

[1] Milton Feng,et al. Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors on GaAs (100) substrates , 1989 .

[2] T. H. Windhorn,et al. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K , 1982, IEEE Electron Device Letters.

[3] Milton Feng,et al. Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates , 1989 .

[4] G.W. Wang,et al. Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD , 1989, IEEE Electron Device Letters.

[5] C. Yuen,et al. A monolithic 40-GHz HEMT low-noise amplifier , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.