Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack Reliability
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Xing Wu | Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | Thomas Kauerauf | Xiang Li | Wenhu Liu
[1] G. Groeseneken,et al. TDDB Reliability Prediction Based on the Statistical Analysis of Hard Breakdown Including Multiple Soft Breakdown and Wear-out , 2007, 2007 IEEE International Electron Devices Meeting.
[2] Alexander L. Shluger,et al. The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 , 2009 .
[3] L. Larcher,et al. Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer , 2010, 2010 IEEE International Reliability Physics Symposium.
[4] Nagarajan Raghavan,et al. Electrode material dependent breakdown and recovery in advanced high-κ gate stacks , 2010 .
[5] Michel Bosman,et al. Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics , 2010 .
[6] X. Li,et al. The chemistry of gate dielectric breakdown , 2008, 2008 IEEE International Electron Devices Meeting.
[7] Nagarajan Raghavan,et al. Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications , 2010 .
[8] J. P. Neumann,et al. The Ni−O (Nickel-Oxygen) system , 1984 .
[9] S. Mahapatra,et al. Tri-Level Resistive Switching in Metal-Nanocrystal-Based $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Gate Stack , 2010, IEEE Transactions on Electron Devices.
[10] G. Bersuker,et al. Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application , 2006, 2009 Symposium on VLSI Technology.
[11] Patrick M. Lenahan,et al. The effect of interfacial layer properties on the performance of Hf-based gate stack devices , 2006 .
[12] Supratik Guha,et al. High-κ/Metal Gate Science and Technology , 2009 .
[13] E. Cartier,et al. Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond , 2006, 2009 Symposium on VLSI Technology.
[14] Krishna C. Saraswat,et al. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer , 2004 .
[15] G. Eriksson,et al. Thermodynamic modelling of the system titanium-oxygen☆ , 1999 .
[16] Nagaiyar Krishnamurthy,et al. The O-Ta (Oxygen-Tantalum) system , 1996 .