论文信息 - Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen inducedfilament confinement. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any

[1] Hangbing Lv,et al. Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device , 2012 .

[2] Kikuo Yamabe,et al. First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics , 2005 .