Amorphous metal alloy based MEMS for RF applications

Abstract A new MEMS process based on amorphous metal alloys has been developed. The alloy in question is sputter-deposited molybdenum–silicon–nitrogen (Mo–Si–N) with atomic composition of 31 at% Mo, 20 at% Si, 45 at% N and 4 at% O and tensile residual stress of 300 MPa. This surface micromechanical process has been used for fabrication of variable capacitors for microwave and millimetre wave applications. The devices have been measured up to 110 GHz. They showed low loss (less than 0.2 dB up to 20 GHz and 1.2 dB up to 110 GHz in their up-state) and good matching. The devices have also been cycled 50 million times with 100 Hz frequency between the up- and down-states without impaired performance.

[1]  H. Kattelus,et al.  Amorphous Mo-N and Mo-Si-N films in microelectromechanical systems , 2005 .

[2]  D. W. Hoffman Perspective on stresses in magnetron‐sputtered thin films , 1994 .

[3]  I. De Wolf,et al.  Materials issues in the processing, the operation and the reliability of MEMS , 2004 .

[4]  Gabriel M. Rebeiz,et al.  Optimization of distributed MEMS transmission-line phase shifters-U-band and W-band designs , 2000 .

[5]  Gabriel M. Rebeiz,et al.  A 4–18-GHz reconfigurable RF MEMS matching network for power amplifier applications , 2004 .

[6]  A. Shimokohbe,et al.  A MEMS conical spring actuator array , 2005, Journal of Microelectromechanical Systems.

[7]  M. Nicolet,et al.  Highly metastable amorphous or near-amorphous ternary films (mictamict alloys) , 2001 .

[8]  H. Kattelus,et al.  Stress control of sputter-deposited Mo-N films for micromechanical applications , 2002 .

[9]  Gabriel M. Rebeiz RF MEMS: Theory, Design and Technology , 2003 .

[10]  B. Guldimann,et al.  Electrostatically actuated gas microvalve based on a Ta-Si-N membrane , 2001, Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090).

[11]  M. Telford The case for bulk metallic glass , 2004 .

[12]  Ai Qun Liu,et al.  Improvement of isolation for MEMS capacitive switch via membrane planarization , 2005 .

[13]  Akira Shimokohbe,et al.  Thermal, Mechanical and Electrical Properties of Pd-Based Thin-Film Metallic Glass , 2001 .

[14]  A. Tolkki,et al.  A batch process to deposit amorphous metallic Mo–Si–N films , 2003 .

[15]  Gabriel M. Rebeiz,et al.  A differential 4-bit 6.5-10-GHz RF MEMS tunable filter , 2005, IEEE Transactions on Microwave Theory and Techniques.

[16]  D. Peroulis,et al.  Highly reliable analog MEMS varactors , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[17]  Gabriel M. Rebeiz,et al.  A 4-18-GHz reconfigurable RF MEMS matching network for power amplifier applications: Reconfigurable RF MEMS Matching Network , 2004 .