Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells

The growth and characterization of high quality epitaxial layers of GaInP and GaInP‐containing quantum wells grown by solid‐source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence linewidths as small as 6.7 meV and double‐crystal x‐ray diffraction linewidths as narrow as 12.5 arcsec. Evidence for the presence of long‐range ordering in MBE‐grown GaInP is discussed. GaAs‐GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth square well model suggests a very small value for the conduction band offset in this system. GaInP‐(Al0.37Ga0.64)0.51In0.49P quantum wells show good optical properties with emission at energies as high as 2.15 eV (≡6000 A at 300 K) at 4.2 K for a 12 A well.

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