论文信息 - Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric - 字舞流文

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

G. Simin | Xuhong Hu | V. Wheeler | C. Eddy | M. Chandrashekhar | Asif Khan | M. Gaevski | I. Ahmad | Shahab Mollah | A. Mamun | K. Hussain | Rich Floyd