Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector

We report on AlGaN/GaN heterostructures ultraviolet (UV) p–i–n photodetectors (PDs) in which generationrecombination and tunneling currents dominate PD leakage at high reverse voltage. At low voltages, the shunt current related to threading dislocations dominate PD leakage. The PD exhibits a narrow bandpass spectral responsivity characteristics from 320 to 360 nm, a zero bias peak responsivity 0.155 A/W at 360 nm, which corresponding to a quantum efficiency of 53%. Additionally, the effect of polarization effect on responsivity of the PD have been investigated.

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