Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector
暂无分享,去创建一个
Jun Wang | Jin Guo | Feng Xie | Cong Li | Run Wang | Guosheng Wang | Jun Wang | Jin Guo | Guosheng Wang | F. Xie | R. Wang | Cong Li
[1] E. Ozbay,et al. Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity , 2004, IEEE Photonics Technology Letters.
[2] Nitride-based p-i-n bandpass photodetectors , 2005, IEEE Electron Device Letters.
[4] Manijeh Razeghi,et al. AlGaN ultraviolet photoconductors grown on sapphire , 1996 .
[5] Manijeh Razeghi,et al. Short-wavelength solar-blind detectors-status, prospects, and markets , 2002, Proc. IEEE.
[6] R. Dupuis,et al. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates , 2009 .
[7] Jinn-Kong Sheu,et al. Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN , 2006 .
[8] E. Ozbay,et al. Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN , 2006 .
[9] Ekmel Ozbay,et al. High-performance visible-blind GaN-based p-i-n photodetectors , 2008 .
[10] Richard J. Molnar,et al. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes , 2001 .
[11] R. Zhang,et al. Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate , 2011, IEEE Electron Device Letters.
[13] James S. Speck,et al. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films , 1996 .
[14] Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors , 2007 .