An experimental investigation of P-N diode electrical characteristics by soft X-ray annealing method

[1]  M. Shahjamal,et al.  Infrared Security Alarming System , 2010 .

[2]  Midorikawa,et al.  Effects of electron and proton irradiation on embedded SiGe source/drain diodes , 2008 .

[3]  C. Tsai,et al.  Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm , 2008 .

[4]  E. Manea,et al.  Silicon metal-semiconductor–metal photodetector with zinc oxide transparent conducting electrodes , 2008 .

[5]  Alberto J. Palma,et al.  Evaluation of a low-cost commercial mosfet as radiation dosimeter , 2006 .

[6]  E. Ayyıldız,et al.  The effect of series resistance on capacitance voltage characteristics of Schottky barrier diodes , 2005 .

[7]  Eddy Simoen,et al.  Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation , 2003 .

[8]  Y. Belkacem,et al.  Effect of series resistance on the performance of high resistivity silicon Schottky diode , 2003 .

[9]  E. Simoen,et al.  Radiation damage of Si photodiodes by high-temperature irradiation , 2003 .

[10]  E. Simoen,et al.  Irradiation temperature dependence of radiation damage in STI Si diodes , 2003 .

[11]  E. Simoen,et al.  Radiation damage in Si photodiodes by high-temperature irradiation , 2003 .

[12]  Y. Koike,et al.  High efficiency optical coupler for a small photo acceptance area photodiode used in the high speed plastic optical fiber communication , 2002 .

[13]  Eddy Simoen,et al.  Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation , 2001 .

[14]  E. Simoen,et al.  Radiation defects in STI silicon diodes and their effects on device performance , 2001 .

[15]  E. Simoen,et al.  Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes , 2000 .

[16]  N. Cheung,et al.  Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .