Threshold voltage and subthreshold slope of the volume-inversion MOS transistor

One dimensional numerical simulations of a silicon on insulator transistor, operated in the volume inversion mode, are presented. It is found that, in the case of thin silicon films, the constant potential (CP) approximation holds which allows us to establish analytical expressions for the threshold voltage and subthreshold slope. The very thick film situation is also examined so as to cover the whole range of film thickness.